2n4392 jfet switching n channel- depletion features ? low on resistance fast switching military options available applications: switching applications v ds drain?source voltage v dg drain?gate voltage v gs gate?source voltage i gf forward gate current p d total device dissipation @ t c = 25c derate above 25c t j operating junction temperature range t stg storage temperature range 40v 40v 40v 50ma 1.8w 10mw/ c ?65 to +175c ?65 to +175c mechanical data dimensions in mm (inches) to?18 metal package absolute maximum ratings (t case = 25c unless otherwise stated) pin 1 ? source underside view pin 2 ? drain pin 3 ? gate 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. (gate is connected to case) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3846 issue 2
parameter test conditions min. typ. max. unit i g = 1.0 av ds = 0 v gs = 20v v ds = 0 v gs = 20v v ds = 0 t a = 150 c v ds = 20v i d = 1.0na i g = 1.0ma v ds = 0 v gs = 7v v ds = 20v v gs = 7v v ds = 20v t a = 150 c v gs = 0v v ds = 20v i d = 6ma v gs = 0 i d = 1.0ma v gs = 0 v gs = 0v v ds = 20v f = 1.0mhz v gs = 7v v ds = 0v f = 1.0mhz v gs = 0v i d = 0 f = 1.0khz i d(on) = 6ma v gs(on) = 7v i d(on) = 6ma v gs(off) = 7v 40 0.1 0.2 -0.2 -5 1.0 0.1 0.2 25 75 0.4 60 14 3.5 60 15 35 5.0 20 off characteristics 2n4392 electrical characteristics (t a = 25 c unless otherwise stated) 1) pulse test : pulse width < 100 s ,duty cycle < 2% 2) f t is defined as the frequency at which |h fe | extrapolates to untity. on characteristics switching characteristics electrical characteristics small signal characteristics v na a v v na a ma v ? pf ? ns v (br)gss gate source breakdown voltage 1 i gss gate reverse current v gs gate source voltage v gs(f) gate source forward voltage i d(off) drain cut-off current i dss zero gate voltage drain current 1 v ds(on) drain source on ? voltage r ds(on) static drain source on resistance c iss input capacitance c rss reverse transfer capacitance r ds(on) drain ? source ? on ? resistance t on turn ? on time t off turn ? off time t r risetime t f falltime semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3846 issue 2
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